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ZTX555 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX555
- Package: E-Line-3
- Datasheet:
- Stock: 3792
- Description: ZTX555 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Current Rating | -1A |
| Base Part Number | ZTX555 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 300mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 150V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
ZTX555 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 300mA 10V.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Collector current can be as low as 1A volts at its maximum.
ZTX555 Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
ZTX555 Applications
There are a lot of Diodes Incorporated ZTX555 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
