ZTX549STZ

ZTX549STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZTX549STZ
  • Package: E-Line-3, Formed Leads
  • Datasheet: pdf
  • Stock: 8760
  • Description: ZTX549STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 4.95mm
Length 4.95mm
Width 3.94mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Voltage - Rated DC -25V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX549
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -35V

ZTX549STZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.

ZTX549STZ Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz

ZTX549STZ Applications


There are a lot of Diodes Incorporated ZTX549STZ applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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