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ZTX549STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX549STOB
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 5721
- Description: ZTX549STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX549 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 750mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 30V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -35V |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -1A |
| Height | 4.95mm |
| Length | 4.95mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
ZTX549STOB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX549STOB Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
ZTX549STOB Applications
There are a lot of Diodes Incorporated ZTX549STOB applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
