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ZTX1149A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX1149A
- Package: E-Line-3
- Datasheet:
- Stock: 8791
- Description: ZTX1149A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3A |
| Frequency | 135MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX1149A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 135MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 70mA, 3A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 135MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -3A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
ZTX1149A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 70mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 135MHz.This device can take an input voltage of 25V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZTX1149A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 70mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 135MHz
ZTX1149A Applications
There are a lot of Diodes Incorporated ZTX1149A applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
