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ContactVMM85-02F
Trans MOSFET N-CH 200V 84A 7-Pin Y4-M5
- Manufacturer: IXYS / Littelfuse
- NO: 415-VMM85-02F
- Package: Y4-M6
- Datasheet:
- Stock: 5499
- Description: Trans MOSFET N-CH 200V 84A 7-Pin Y4-M5(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Y4-M6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| Series | HiPerFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 370W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | VMM |
| JESD-30 Code | R-PUFM-X7 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 370W |
| Case Connection | ISOLATED |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 450nC @ 10V |
| Rise Time | 80ns |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 200 ns |
| Continuous Drain Current (ID) | 84A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 83A |
| Drain-source On Resistance-Max | 0.02Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 335A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
