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US6X6TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-US6X6TR
- Package: 6-SMD, Flat Leads
- Datasheet:
- Stock: 9648
- Description: US6X6TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1.5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | US6X |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 270 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
US6X6TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 100mA 2V.When VCE saturation is 350mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 300MHz in the part.An input voltage of 30V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
US6X6TR Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
US6X6TR Applications
There are a lot of ROHM Semiconductor US6X6TR applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
