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US6X5TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-US6X5TR
- Package: 6-SMD, Flat Leads
- Datasheet:
- Stock: 6280
- Description: US6X5TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 12V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | US6X |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 360MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 360MHz |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 270 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
US6X5TR Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 360MHz.This device can take an input voltage of 12V volts before it breaks down.Maximum collector currents can be below 2A volts.
US6X5TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
US6X5TR Applications
There are a lot of ROHM Semiconductor US6X5TR applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
