US6K4TR

MOSFET 2N-CH 20V 1.5A TUMT6


  • Manufacturer: ROHM Semiconductor
  • NO: 687-US6K4TR
  • Package: 6-SMD, Flat Leads
  • Datasheet: pdf
  • Stock: 5581
  • Description: MOSFET 2N-CH 20V 1.5A TUMT6(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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IMPORTANT NOTICE

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Supplier Device Package TUMT6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number *K4
Element Configuration Dual
Power Dissipation 1W
Turn On Delay Time 5 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
Input Capacitance 110pF
FET Feature Logic Level Gate
Drain to Source Resistance 130mOhm
Rds On Max 180 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.