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ContactTTA0002(Q)
TTA0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TTA0002(Q)
- Package: TO-3PL
- Datasheet:
- Stock: 7686
- Description: TTA0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 180W |
| Frequency | 30MHz |
| Number of Elements | 1 |
| Power Dissipation | 180W |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 18A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | -2V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 80 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
TTA0002(Q) Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.As it features a collector emitter saturation voltage of -2V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 900mA, 9A.With the emitter base voltage set at -5V, an efficient operation can be achieved.A maximum collector current of 18A volts can be achieved.
TTA0002(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 900mA, 9A
the emitter base voltage is kept at -5V
TTA0002(Q) Applications
There are a lot of Toshiba Semiconductor and Storage TTA0002(Q) applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
