TSA1765CW RPG

PNP150°C TJ100nA ICBOTO-261-4, TO-261AATape & Reel (TR)Surface Mount


  • Manufacturer: Taiwan Semiconductor Corporation
  • NO: 799-TSA1765CW RPG
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 3312
  • Description: PNP150°C TJ100nA ICBOTO-261-4, TO-261AATape & Reel (TR)Surface Mount(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 32 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 560V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant

TSA1765CW RPG Overview


DC current gain in this device equals 150 @ 1mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 560V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

TSA1765CW RPG Features


the DC current gain for this device is 150 @ 1mA 10V
the vce saturation(Max) is 500mV @ 10mA, 50mA
the supplier device package of SOT-223

TSA1765CW RPG Applications


There are a lot of Taiwan Semiconductor Corporation TSA1765CW RPG applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

In Stock

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