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ContactTPCF8402(TE85L,F,M
MOSFET N/P-CH 30V 4A/3.2A VS-8
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPCF8402(TE85L,F,M
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 3478
- Description: MOSFET N/P-CH 30V 4A/3.2A VS-8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 330mW |
| Base Part Number | TPC*402 |
| Power Dissipation | 1.35W |
| FET Type | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A 3.2A |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 5.2ns |
| Fall Time (Typ) | 4 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
