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ContactTPCF8101(TE85L,F,M
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 28mOhm @ 3A, 4.5V 1600pF @ 10V 18nC @ 5V 12V 8-SMD, Flat Lead
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPCF8101(TE85L,F,M
- Package: 8-SMD, Flat Lead
- Datasheet:
- Stock: 9065
- Description: MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 28mOhm @ 3A, 4.5V 1600pF @ 10V 18nC @ 5V 12V 8-SMD, Flat Lead (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2002 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 700mW Ta |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time (Typ) | 21 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.6nF |
| Rds On Max | 28 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
