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ContactTPCA8120,LQ(CM
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 3mOhm @ 22.5A, 10V +20V, -25V 7420pF @ 10V 190nC @ 10V 30V 8-PowerVDFN
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPCA8120,LQ(CM
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 2234
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 3mOhm @ 22.5A, 10V +20V, -25V 7420pF @ 10V 190nC @ 10V 30V 8-PowerVDFN (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSVI |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 1.6W Ta 45W Tc |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 22.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7420pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 45A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -25V |
| Fall Time (Typ) | 262 ns |
| Continuous Drain Current (ID) | 45A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.42nF |
| Rds On Max | 3 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
