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ContactTPCA8016-H(TE12LQM
MOSFET (Metal Oxide) N-Channel Digi-Reel® 21mOhm @ 13A, 10V 1375pF @ 10V 22nC @ 10V 60V 8-PowerVDFN
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPCA8016-H(TE12LQM
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 1676
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 21mOhm @ 13A, 10V 1375pF @ 10V 22nC @ 10V 60V 8-PowerVDFN (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Packaging | Digi-Reel® |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation | 45W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1375pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 4ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 3 ns |
| Continuous Drain Current (ID) | 25A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 1.375nF |
| Drain to Source Resistance | 21mOhm |
| Rds On Max | 21 mΩ |
| RoHS Status | RoHS Compliant |
