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ContactTPC8125,LQ(S
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 13m Ω @ 5A, 10V +20V, -25V 2580pF @ 10V 64nC @ 10V 8-SOIC (0.154, 3.90mm Width)
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TPC8125,LQ(S
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 436
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 13m Ω @ 5A, 10V +20V, -25V 2580pF @ 10V 64nC @ 10V 8-SOIC (0.154, 3.90mm Width) (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSVI |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2580pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -25V |
| Fall Time (Typ) | 75 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 30V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
