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TN6729A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-TN6729A
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 6150
- Description: TN6729A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-226-3 |
| Weight | 250mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 1W |
| Current Rating | -1A |
| Base Part Number | TN6729A |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 1W |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
TN6729A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-226-3 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.Maximum collector currents can be below 1A volts.
TN6729A Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
the supplier device package of TO-226-3
TN6729A Applications
There are a lot of ON Semiconductor TN6729A applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
