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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.4mOhm @ 30A, 10V ±20V 2700pF @ 10V 40nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK60P03M1,RQ(S
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1691
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.4mOhm @ 30A, 10V ±20V 2700pF @ 10V 40nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Supplier Device Package | DPAK |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSVI-H |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 63W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 4.3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.7nF |
| Rds On Max | 6.4 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
