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ContactTK35S04K3L(T6L1,NQ
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.3mOhm @ 17.5A, 10V ±20V 1370pF @ 10V 28nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK35S04K3L(T6L1,NQ
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 13479
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.3mOhm @ 17.5A, 10V ±20V 1370pF @ 10V 28nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 10.3mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.37nF |
| Rds On Max | 10.3 Ω |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | DPAK+ |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | U-MOSIV |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 58W Tc |
| Power Dissipation | 58W |
