Products
Manufacturer
RFQ
NEWS
ContactTK13E25D,S1X(S
MOSFET N-CH 250V 13A TO-220AB
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK13E25D,S1X(S
- Package: TO-220-3
- Datasheet:
- Stock: 4743
- Description: MOSFET N-CH 250V 13A TO-220AB(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Configuration | Single |
| Power Dissipation-Max | 102W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Continuous Drain Current (ID) | 13A |
| Gate to Source Voltage (Vgs) | 20V |
