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PNP150°C TJ200μA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-TIP32CTU
- Package: TO-220-3
- Datasheet:
- Stock: 4885
- Description: PNP150°C TJ200μA1 Elements3 TerminationsSILICONPNPTO-220-3TubeThrough Hole(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 2W |
| Current Rating | -3A |
| Frequency | 3MHz |
| Base Part Number | TIP32 |
| Number of Elements | 1 |
| Voltage | 100V |
| Element Configuration | Single |
| Current | 3A |
| Power Dissipation | 2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V |
| Current - Collector Cutoff (Max) | 200μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | -1.2V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Height | 16.51mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.214012g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
TIP32CTU Overview
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.During maximum operation, collector current can be as low as 3A volts.
TIP32CTU Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32CTU Applications
There are a lot of ON Semiconductor TIP32CTU applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
