TIP32C

TIP32C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi


  • Manufacturer: Rochester Electronics
  • NO: 699-TIP32C
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 3312
  • Description: TIP32C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -65°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 3MHz
RoHS Status Non-RoHS Compliant

TIP32C Overview


In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.TO-220AB is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

TIP32C Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220AB

TIP32C Applications


There are a lot of Rochester Electronics, LLC TIP32C applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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