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TIP30C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi
- Manufacturer: Rochester Electronics
- NO: 699-TIP30C
- Package: TO-220-3
- Datasheet:
- Stock: 4053
- Description: TIP30C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Voltage - Rated DC | -100V |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | unknown |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 30W |
| Power - Max | 2W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A 4V |
| Current - Collector Cutoff (Max) | 300μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
TIP30C Description
Rochester Electronics, LLC produces the TIP30C, a PNP high-power bipolar transistor. TIP30C has a 150°C TJ working temperature and a 30W power dissipation. It is packaged in the TO-220-3 format. The TIP30C is a PNP high-power bipolar transistor with a collector-emitter saturation voltage of 0.7V (maximum) at 1A and a minimum current gain-bandwidth product of 3MHz at 200mA. TIP30 series silicon PNP epitaxial-base power transistors from CENTRAL SEMICONDUCTOR are developed for power amplifier and high-speed switching applications.
TIP30C Features
?-65 to 150°C Operating junction temperature range
?Multicomp Pro products are rated 4.6 out of 5 stars
? 12-month limited warranty *view Terms & Conditions for details
?96% of customers would recommend to a friend
TIP30C Applications
? Power amplifier
? High-speed switching applications
