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TC8020K6-G
  • TC8020K6-G

TC8020K6-G

TC8020K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at Feilidi


  • Manufacturer: Microchip Technology
  • NO: 536-TC8020K6-G
  • Package: 56-VFQFN Exposed Pad
  • Datasheet: pdf
  • Stock: 9667
  • Description: TC8020K6-G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microchip Technology stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 56-VFQFN Exposed Pad
Number of Pins 56
Weight 191.387631mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2012
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Position QUAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 6
Configuration COMPLEX
Number of Channels 12
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type 6 N and 6 P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Rise Time 15ns
Drain to Source Voltage (Vdss) 200V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage -200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant

TC8020K6-G                      Description

The Supertex TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

 

 

TC8020K6-G                      Features

► High voltage, vertical DMOS technology

► Integrated gate-to-source resistor

► Integrated gate-to-source Zener diode

► Typical peak output +/-3.5A at 50V

► Low threshold, low on-resistance

► Low input & output capacitance

► Fast switching speeds

► Electrically isolated N- and P-MOSFET pairs

 

TC8020K6-G                      Applications

► High voltage pulsers

► Amplifiers

► Buffers

► Piezoelectric transducer drivers

► General purpose line drivers

► Logic level interfaces

 


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