STS8DNH3LL

STS8DNH3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STS8DNH3LL
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 7241
  • Description: STS8DNH3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ III
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS8DN
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 857pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 14.5ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Lead Free

STS8DNH3LL            Description

 

  This product adopts the latest advanced design rules of ST's proprietary STripFET converter technology and is suitable for the most demanding DC-DC converter applications that require high efficiency.

 

STS8DNH3LL               Features


■ Optimal RDS(on) x Qg trade-off @ 4.5 V

■ Conduction losses reduced

■ Switching losses reduced


STS8DNH3LL                 Application


■ Switching applications

 






In Stock

Please send RFQ , we will respond immediately.