STS8DNF3LL

STS8DNF3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STS8DNF3LL
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5141
  • Description: STS8DNF3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e4
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 1.6W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS8DN
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 18 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time 32ns
Fall Time (Typ) 11 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 16V

STS8DNF3LL      Description


  This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.


STS8DNF3LL                Features


? Optimal RDS(on) x Qg trade-off @ 4.5 V

? Conduction losses reduced

? Switching losses reduced


STS8DNF3LL                 Applications


? Switching applications

 


In Stock

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