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STS8DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS8DN3LLH5
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2630
- Description: STS8DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Max Power Dissipation | 2.7W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STS8DN |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Turn On Delay Time | 4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 724pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Rise Time | 4.2ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 21.1 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 22V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 40A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ V |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 19MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
STS8DN3LLH5 Description
This STripFET V power MOSFET technology is one of the latest improvements, specifically tailored to achieve extremely low on-resistance, and is one of the best FOM of its kind.
STS8DN3LLH5 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
STS8DN3LLH5 Application
Switching applications
