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ContactSTS5DNF60L
STS5DNF60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS5DNF60L
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2664
- Description: STS5DNF60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, STripFET™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | STS5D |
| Pin Count | 8 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 15 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Rise Time | 28ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 15V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain-source On Resistance-Max | 0.055Ohm |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STS5DNF60L Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF60L Features
? AEC-Q101 qualified
? Exceptional dv/dt capability
? 100% avalanche tested
? Low gate charge
STS5DNF60L Applications
? Switching applications
