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ContactSTS4C3F60L
STS4C3F60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS4C3F60L
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7325
- Description: STS4C3F60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STS4C |
| Pin Count | 8 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A 3A |
| Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 4.5V |
| Rise Time | 54ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 14.5 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 530mA |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.065Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 16A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STS4C3F60L Description
This power MOSFET is the latest development of the unique "single feature size" strip process of STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong and durable avalanche characteristics and less critical alignment steps, so it has significant manufacturing repeatability.
STS4C3F60L Features
■ Standard outline for easy automated surface
mount assembly
■ Low threshold drive
STS4C3F60L Applications
■ Switching application
