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ContactSTS2DNF30L
STS2DNF30L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STS2DNF30L
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2154
- Description: STS2DNF30L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.15Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 9A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 6.35mm |
| Length | 50.8mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e4 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STS2D |
| Pin Count | 8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 19 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 121pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| Rise Time | 20ns |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 18V |
STS2DNF30L Description
This power MOSFET is the latest development of the unique "single feature size" strip process of STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong avalanche characteristics and less critical alignment steps, so it has significant manufacturing repeatability.
STS2DNF30L Features
■ Standard outline for easy automated surface
mount assembly
■ Low threshold gate drive
STS2DNF30L Application
■ Switching applications
