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STR2550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STR2550
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1838
- Description: STR2550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | STR1550 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 500mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 50mA |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 500V |
| Collector Base Voltage (VCBO) | -500V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 10 |
| Height | 1.3mm |
| Length | 3.04mm |
| Width | 1.75mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
STR2550 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 50mA.Keeping the emitter base voltage at -7V allows for a high level of efficiency.As a result, it can handle voltages as low as 500V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
STR2550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
STR2550 Applications
There are a lot of STMicroelectronics STR2550 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
