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STR1550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STR1550
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5752
- Description: STR1550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | STR1550 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 6mA, 50mA |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 500V |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 100 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.4mm |
| Length | 3.04mm |
| Width | 1.75mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STR1550 Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 6mA, 50mA.Emitter base voltages of 9V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 500V volts.When collector current reaches its maximum, it can reach 500mA volts.
STR1550 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 6mA, 50mA
the emitter base voltage is kept at 9V
STR1550 Applications
There are a lot of STMicroelectronics STR1550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
