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STN851 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STN851
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7039
- Description: STN851 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1.6W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STN851 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.6W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 2A 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 5A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 320mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 150 |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STN851 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 1V.With a collector emitter saturation voltage of 320mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics STN851 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
