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STN2580 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STN2580
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 9871
- Description: STN2580 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.6W |
| Base Part Number | STN25 |
| Element Configuration | Single |
| Power - Max | 1.6W |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA 5V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Max Breakdown Voltage | 400V |
| Collector Base Voltage (VCBO) | 800V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 60 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STN2580 Overview
In this device, the DC current gain is 60 @ 250mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.The breakdown input voltage is 400V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
STN2580 Features
the DC current gain for this device is 60 @ 250mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 9V
STN2580 Applications
There are a lot of STMicroelectronics STN2580 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
