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ContactSTL7DN6LF3
STL7DN6LF3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STL7DN6LF3
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 9492
- Description: STL7DN6LF3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 52W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | STL7D |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 52W |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 432pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.06Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 26A |
| Avalanche Energy Rating (Eas) | 190 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, STripFET™ III |
STL7DN6LF3 Description
The device is a double N channel power MOSFET developed by STripFET F3 technology. It aims to minimize on-resistance and gate charge to provide excellent switching performance.
STL7DN6LF3 Features
? Designed for automotive application and
AEC-Q101 qualified
? Logic level VGS(th)
? 175 ??C junction temperature
? 100% avalanche rated
? Wettable flank package
STL7DN6LF3 Applications
? Switching applications
