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STL65DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STL65DN3LLH5
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 7200
- Description: STL65DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 76A |
| Number of Programmable I/O | 114 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | OBSOLETE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ V |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 6.5MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 60W |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STL65 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Interface | CAN, I2C, I2S, SPI, UART, USART, USB |
| Memory Size | 768kB |
| Element Configuration | Dual |
| RAM Size | 132kB |
| Memory Type | FLASH |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| Watchdog Timer | Yes |
| Data Bus Width | 32b |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Number of Timers/Counters | 14 |
| Continuous Drain Current (ID) | 65A |
| Gate to Source Voltage (Vgs) | 22V |
| Core Architecture | ARM |
| Max Frequency | 120MHz |
| Drain Current-Max (Abs) (ID) | 19A |
STL65DN3LLH5 Description
The product adopts the fifth generation design rules of STMicroelectronics proprietary STripFET semiconductor technology. The lowest RDS (ON) * QG available in this chip-level package makes the device suitable for the most demanding DC-DC converter applications where high power density is required.
STL65DN3LLH5 Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
STL65DN3LLH5 Application
Switching applications
