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ContactSTL50DN6F7
STL50DN6F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STL50DN6F7
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 7808
- Description: STL50DN6F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 62.5W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STL50 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 57A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Continuous Drain Current (ID) | 57A |
| Drain-source On Resistance-Max | 0.011Ohm |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STL50DN6F7 Description
By combining STripFETTM F7 technology with an improved trench gate structure, this dual N-channel Power MOSFET achieves extremely low onstate resistance while also lowering internal capacitance and gate charge for quicker and more effective switching. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
STL50DN6F7 Features
one of the lowest RDS(on)s available
Outstanding figure of merit (FoM)
Low Crss/Ciss ratio to prevent EMI
Extremely rough under avalanches
STL50DN6F7 Applications
Switching applications
