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STGW30NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STGW30NC60KD
- Package: TO-247-3
- Datasheet:
- Stock: 1766
- Description: STGW30NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA FAST |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Base Part Number | STGW30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Turn On Delay Time | 29 ns |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 120 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 40 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 41 ns |
| Test Condition | 480V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 290 ns |
| Gate Charge | 96nC |
| Current - Collector Pulsed (Icm) | 125A |
| Td (on/off) @ 25°C | 29ns/120ns |
| Switching Energy | 350μJ (on), 435μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STGW30NC60KD Description
STGW30NC60KD is a type of short circuit rugged IGBT developed by STMicroelectronics utilizing the advanced PowerMESH? process. It is able to deliver an excellent switching performance while maintaining low on-state behavior. It is available in the TO-247 package to save board space. Based on its specific characteristics, STGW30NC60KD IGBT is well suited for motor drivers and high-frequency inverters.
STGW30NC60KD Features
Low on-voltage drop (VCE(sat))
Short circuit withstand time 10 μs
Low Cres / Cies ratio (no cross-conduction susceptibility)
IGBT co-packaged with ultra-fast free-wheeling diode
STGW30NC60KD Applications
High-frequency inverters
Motor drivers
