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STBV42-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STBV42-AP
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1014
- Description: STBV42-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STBV42 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 400mA 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 750mA |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 400V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 10 |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
STBV42-AP Overview
In this device, the DC current gain is 10 @ 400mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 250mA, 750mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Single BJT transistor can take a breakdown input voltage of 400V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
STBV42-AP Features
the DC current gain for this device is 10 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
STBV42-AP Applications
There are a lot of STMicroelectronics STBV42-AP applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
