SSM6N7002BFU,LF

MOSFET 60V VDSS 20V VGSS 200mA ID 150mW


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-SSM6N7002BFU,LF
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: pdf
  • Stock: 8669
  • Description: MOSFET 60V VDSS 20V VGSS 200mA ID 150mW(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 300mW
Terminal Form GULL WING
Reach Compliance Code unknown
Base Part Number SSM6N7002
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.