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MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-SSM6N55NU,LF
- Package: 6-WDFN Exposed Pad
- Datasheet:
- Stock: 1875
- Description: MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Number of Pins | 6 |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2017 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 1W |
| Number of Elements | 2 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 46m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
