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ContactSSM6N17FU(TE85L,F)
MOSFET, NN CH, 0.1A, 50V, SC70
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-SSM6N17FU(TE85L,F)
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 4869
- Description: MOSFET, NN CH, 0.1A, 50V, SC70(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Operating Temperature | 150°C |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Max Power Dissipation | 200mW |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200mW |
| Turn On Delay Time | 100 ns |
| Power - Max | 200mW Ta |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 20 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.5V @ 1μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 3V |
| Current - Continuous Drain (Id) @ 25°C | 100mA Ta |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 100mA |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 7V |
| Drain Current-Max (Abs) (ID) | 0.1A |
| Dual Supply Voltage | 50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 1.5 V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
