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ContactSSM6L36FE,LM
MOSFET N/P-CH 20V 0.5A/0.33A ES6
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-SSM6L36FE,LM
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 5210
- Description: MOSFET N/P-CH 20V 0.5A/0.33A ES6(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SSM6L36 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 630m Ω @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA 330mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 330mA |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Drain-source On Resistance-Max | 0.85Ohm |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Transistor Element Material | SILICON |
