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SS8550CBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SS8550CBU
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 7537
- Description: SS8550CBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Current Rating | -1.5A |
| Frequency | 200MHz |
| Base Part Number | SS8550 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -280mV |
| Collector Base Voltage (VCBO) | -40V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 85 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
SS8550CBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -280mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 80mA, 800mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -6V for high efficiency.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
SS8550CBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550CBU Applications
There are a lot of ON Semiconductor SS8550CBU applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
