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SS8050DTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SS8050DTA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 5349
- Description: SS8050DTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 190MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 85 |
| Height | 4.58mm |
| Length | 4.58mm |
| Width | 3.86mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Current Rating | 1.5A |
| Frequency | 100MHz |
| Base Part Number | SS8050 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | AMPLIFIER |
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).Parts of this part have transition frequencies of 190MHz.The breakdown input voltage is 25V volts.A maximum collector current of 1.5A volts is possible.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor SS8050DTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
