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SS8050-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi
- Manufacturer: Comchip Technology
- NO: 186-SS8050-G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4527
- Description: SS8050-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 300mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 25V |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
SS8050-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.A maximum collector current of 1.5A volts can be achieved.
SS8050-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 100MHz
SS8050-G Applications
There are a lot of Comchip Technology SS8050-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
