SQJQ900E-T1_GE3

MOSFET 2 N-CH 40V POWERPAK8X8


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQJQ900E-T1_GE3
  • Package: PowerPAK® 8 x 8 Dual
  • Datasheet: pdf
  • Stock: 3920
  • Description: MOSFET 2 N-CH 40V POWERPAK8X8(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
FET Feature Standard
Drain Current-Max (Abs) (ID) 60A
Current - Continuous Drain (Id) @ 25°C 100A Tc
Drain to Source Voltage (Vdss) 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 125 mJ
Factory Lead Time 12 Weeks
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Package / Case PowerPAK® 8 x 8 Dual
Reach Compliance Code unknown
Mounting Type Surface Mount
Operating Temperature -55°C~175°C TJ
Operating Mode ENHANCEMENT MODE
Terminal Position SINGLE
Terminal Form GULL WING
Surface Mount YES
JESD-30 Code R-PSSO-G4
Power - Max 75W
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
Drain-source On Resistance-Max 0.0039Ohm
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Transistor Element Material SILICON
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
See Relate Datesheet

In Stock

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