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VISHAY SQJ992EP-T1-GE3 Dual MOSFET, Dual N Channel, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
- Manufacturer: Vishay Siliconix
- NO: 880-SQJ992EP-T1_GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 1543
- Description: VISHAY SQJ992EP-T1-GE3 Dual MOSFET, Dual N Channel, 15 A, 60 V, 0.047 ohm, 10 V, 2 V(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 47mOhm |
| Max Power Dissipation | 34W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 34W |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 56.2m Ω @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 446pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Continuous Drain Current (ID) | 15A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 60A |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
