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ContactSQJ910AEP-T1_GE3
MOSFET Dual N-Channel 30V AEC-Q101 Qualified
- Manufacturer: Vishay Siliconix
- NO: 880-SQJ910AEP-T1_GE3
- Package: PowerPAK® SO-8 Dual
- Datasheet:
- Stock: 9724
- Description: MOSFET Dual N-Channel 30V AEC-Q101 Qualified(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 48W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1869pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain-source On Resistance-Max | 0.007Ohm |
| Pulsed Drain Current-Max (IDM) | 120A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 42 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | Non-RoHS Compliant |
