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ContactSQ9945BEY-T1_GE3
SQ9945BEY-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel
- Manufacturer: Vishay Siliconix
- NO: 880-SQ9945BEY-T1_GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1263
- Description: SQ9945BEY-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Utmel(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 64mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4W |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Turn On Delay Time | 6 ns |
| Power - Max | 4W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 2.8ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 1.7 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 5.4A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 470pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 64mOhm |
| Rds On Max | 64 mΩ |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
