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ContactSQ4961EY-T1_GE3
MOSFET DUAL P-CHAN 60V SO8
- Manufacturer: Vishay Siliconix
- NO: 880-SQ4961EY-T1_GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5135
- Description: MOSFET DUAL P-CHAN 60V SO8(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
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(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Number of Elements | 2 |
| Power Dissipation | 3.3W |
| Turn On Delay Time | 11 ns |
| Power - Max | 3.3W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1140pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 4.4A |
| Gate to Source Voltage (Vgs) | 20V |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
